1 ? fn9141.1 isl6506, isl6506a, isl6506b multiple linear power controller with acpi control interface the isl6506 complements other power building blocks (voltage regulators) in ac pi-compliant designs for microprocessor and comput er applications. the ic integrates the control of the 5v dual and 3.3v dual rails into an 8 pin epad soic package. the isl6506 operating mode (active outputs or sleep outputs) is selectable through two digital control pins, s3# and s5#. a completely integrated linear regulator generates the 3.3v dual voltage plane from the atx supply?s 5v sb output during sleep states (s3, s4/s5). in active states (during s0 and s1/s2), the isl6506 uses an external n-channel pass mosfet to connect the outputs directly to the 3.3v input supplied by an atx power supply, for minimal losses. the isl6506 powers up the 5v dual plane by switching in the atx 5v output through an nmos transistor in active states, or by switching in the atx 5v sb through a pmos (or pnp) transistor in s3 sleep state. in s4/s5 sleep states, the isl6506 and isl6506b 5v dual output is shut down. in the isl6506a, the 5v dual output stays on during s4/s5 sleep states. functionally, the isl6506 and isl6506b are identical. the isl6506b, however, features a 2a current limit on the internal 3.3v ldo while the isl6506 has a 1a current limit. the isl6506a has a 1a current limit on the internal 3.3v ldo. features ? provides 2 acpi-controlled voltages -5v dual usb/keyboard/mouse -3.3v dual /3.3v sb pci/auxiliary/lan ? excellent 3.3v dual regulation in s3/s4/s5 - 2.0% over temperature - 1a capability on isl6506 and isl6506a - 2a capability on isl6506b ? small size; very low external component count ? over-temperature shutdown ? pb-free available applications ? acpi-compliant power regulation for motherboards - isl6506, isl6506b: 5v dual is shut down in s4/s5 sleep states - isl6506a: 5v dual stays on in s4/s5 sleep states pinout isl6506 (soic) top view ordering information part number temp. range (c) package pkg. dwg. # isl6506cb 0 to 70 8 ld epsoic m8.15c isl6506cbz (see note) 0 to 70 8 ld epsoic (pb-free) m8.15c isl6506acb 0 to 70 8 ld epsoic m8.15c isl6506acbz (see note) 0 to 70 8 ld epsoic (pb-free) m8.15c isl6506bcb 0 to 70 8 ld epsoic m8.15c isl6506bcbz (see note) 0 to 70 8 ld epsoic (pb-free) m8.15c *add ?-t? suffix to part number for tape and reel packaging. note: intersil pb-free products em ploy special pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which is compatible with both snpb and pb-free soldering operations. intersil pb-free products are msl classified at pb-free peak reflow te mperatures that meet or exceed the pb-free requirements of ipc/jedec j std-020b. vcc 3v3aux s3# s5# 1 2 3 4 8 7 6 5 n/c 5vdlsb dla gnd gnd data sheet july 2004 caution: these devices are sensitive to electrosta tic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | intersil (and design) is a registered trademark of intersil americas inc. copyright ? intersil americas inc. 2004. all rights reserved. all other trademarks mentioned are the property of their respective owners.
2 block diagram typical application vcc s3# s5# 5vdlsb gnd uv detector monitor & control + - 3v3aux vcc dla temperature monitor digital soft start () ea1 7.5a soft start 10a 10a 12v por sense 3.5 ? slp_s5 slp_s3 vcc 3v3aux s3# s5# nc 5vdlsb dla gnd isl6506 5vsby 12vatx 5vsby 5vatx 3v3atx 5vdual 1 2 3 4 8 7 6 5 epad 9 3v3dual 1k ? q1 q2 q3 cg (optional) isl6506, isl6506a, isl6506b
3 absolute maximum rati ngs thermal information supply voltage, v 5vsb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0v dla . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gnd - 0.3v to +14.5v all other pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+ 7.0v esd classification (human body model) . . . . . . . . . . . . . . . . . tbd recommended operating conditions supply voltage, v 5vsb . . . . . . . . . . . . . . . . . . . . . . . . . . . +5v 5% lowest 5vsb supply voltage guaranteeing parameters . . . . +4.5v digital inputs, v sx . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0 to +5.5v ambient temperature range . . . . . . . . . . . . . . . . . . . . . 0c to 70c junction temperature range. . . . . . . . . . . . . . . . . . . . 0c to 125c thermal resistance (typical) ja (c/w) jc (c/w) epsoic package (notes 1, 2) . . . . . . 40 3.5 maximum junction temperature (plastic package) . . . . . . . . 150c maximum storage temperature range . . . . . . . . . . . -65c to 150c maximum lead temperature (soldering 10s) . . . . . . . . . . . . . 300c (soic - lead tips only) for recommended soldering condi tions see tech brief tb389. caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. note: 1. ja is measured in free air with the component mounted on a high ef fective thermal conductivity test board with ?direct attach? fe atures. 2. for jc , the ?case temp? location is the center of the exposed metal pad on the package underside. electrical specifications recommended operating conditions, unless otherwise noted parameter symbol test conditions min typ max units vcc supply current nominal supply current i 5vsb v s3# = 5v, v s5# = 5v (s0 state) - 3.60 - ma v s3# = 0v, v s5# = 5v (s3 state) - 4.60 - ma v s5# = 0v (s5 state) - 4.60 - ma power-on reset rising 5vsb por threshold --4.5v falling 5vsb por threshold 3.60 - 3.95 v rising 12v por threshold 1.00k ? resistor between dla and 12v rail 8.9 9.8 10.8 v 3.3v aux linear regulator regulation v 5vsby = 5.0v, i 3v3sb = 0a - - 2.0 % 3v3sb nominal voltage level v 3v3sb -3.3- v 3v3sb undervoltage threshold v 3v3sb_uv - 2.475 - v 3v3sb over current trip i 3v3sb_trip isl6506, isl6506a, by design - - 1 a isl6506b, by design - - 2 a 5v dual switch controller 5vdlsb output drive current i 5vdlsb v 5vdlsb = 4v , v 5vsb = 5v 20 - 35 ma timing interval s0 to s3 transition delay -58- s soft start soft start interval t ss 6.55 8.2 9.85 ms 5vdlsb soft start current source --7.5- a control i/o (s3#, s5#) high level input threshold --2.2v low level input threshold 0.8 - - v s3#, s5# internal pull down current to gnd - 10 - a temperature monitor shutdown-level threshold by design - 140 - c isl6506, isl6506a, isl6506b
4 functional pin description vcc (pin 1) provide a very well decoupled 5v bias supply for the ic to this pin by connecting it to the atx 5v sb output. this pin provides all the bias for the ic as well as the input voltage for the internal standby 3v3aux ldo. the voltage at this pin is monitored for power-on reset (por) purposes. gnd (pin 5, pad) signal ground for the ic. these pins are also the ground return for the internal 3v3aux ldo that is active in s3/s4/s5 sleep states. all voltage levels are measured with respect to these pins. s3# and s5# (pins 3 and 4) these pins switch the ic?s oper ating state from active (s0, s1/s2) to s3 and s4/s5 sleep states. these are digital inputs featuring internal 10 a pull down current sources on each pin. additional circuitry blocks illegal state transitions, such as s4/s5 to s3. connect s3# and s5# to the computer system?s slp_s3 and slp_s5 signals, respectively. 3v3aux (pin 2) connect this pin to the 3v3dual output. in sleep states, the voltage at this pin is regulated to 3.3v through an internal pass device powered from 5vsby through the vcc pin. in active states, atx 3.3v output is delivered to this node through a fully-on nmos transistor. during s3 and s4/s5 states, this pin is monitored for undervoltage events. dla (pin 6) this pin is an open-drain output. a 1k ? resistor must be connected from this pin to the atx 12v output. this resistor is used to pull the gates of suitable n-mosfets to 12v, which in active state, switch in the atx 3.3v and 5v outputs into the 3.3v aux and 5v dual outputs, respectively. this pin is also used to monitor the 12v rail during por. if a resistor other than 1k ? is used, the por level will be affected. 5vdlsb (pin 7) connect this pin to the gate of a suitable p-mosfet. isl6506 and isl6506b: in s3 sleep state, this transistor is switched on, connecting the atx 5v sb output to the 5v dual regulator output. isl6506a: in s3 and s4/s5 sleep state, this transistor is switched on, connecting the atx 5v sb output to the 5v dual regulator output. description operation the isl6506 controls 2 output voltages, 3.3v dual and 5v dual . it is designed for microprocessor computer applications requiring 3.3v, 5v, 5v sb , and 12v bias input from an atx power supply. the ic is composed of one linear controller/regulator supplyi ng the computer system?s 3.3v dual power, a dual switch controller supplying the 5v dual voltage, as well as all the control and monitoring functions necessary for complete acpi implementation. initialization the isl6506 automatically initializes upon receipt of input power. the power-on reset (por) function continually monitors the 5v sb input supply voltage. the isl6506 also monitors the 12v rail to insure that the atx rails are up before entering into the s0 state even if both slp_s3 and slp_s5 are both high. dual outputs operational truth table table 1 describes the truth combinations pertaining to the 3.3v dual and 5v dual outputs. the internal circuitry does not allow the transition from an s4/s5 state to an s3 state. functional timing diagrams figures 1 (isl6506/b) and 2 (i sl6506a) are simplified timing diagrams, detailing the power up /down sequences of all the outputs in response to the status of the sleep-state pins (s3#, s5#), as well as the status of the input atx supply. not shown in these diagrams is the deglitch ing feature used to protect against false sleep state tripping. additionally, the isl6506 features a 60 s delay in transitioning from s0 to s3 states. the transition from the s0 state to s4/s5 state is immediate. table 1. 5v dual output truth table s5 s3 3.3aux 5vdl comments 1 1 3.3v 5v s0/s1/s2 states (active) 1 0 3.3v 5v s3 0 1 note maintains previous state 0 0 3.3v 0v s4/s5 (isl6506 & 06b) 0 0 3.3v 5v s4/s5 (isl6506a) note: combination not allowed. figure 1. 5v dual and 3.3v aux timing diagram; isl6506 and isl6506b 5vsb 3.3v, 5v, 12v s3 s5 5vdlsb dla 3v3aux 5vdl isl6506, isl6506a, isl6506b
5 soft-start figures 3 and 4 show the soft-start sequence for the typical application start-up into a sl eep state. at time t0, 5v sb (bias) is applied to the circuit. at time t1, the 5v sb surpasses por level. time t2, one soft start interval after t1, denotes the initiation of soft start. the 3.3v dual rail is brought up through the internal standby ldo through an internal digital soft start function. figure 4 shows the 5v dual rail initiating a soft start at time t2 as well. the isl6506a will draw 7.5 a into the 5vdlsb for a duration of one soft start period. this current will enhance the p-mosfet (q 2 , refer to typical application schematic) in a controlled manner. at time t3, the 3.3v dual is in regulation and the 5vdlsb pin is pulled down to ground. if the 5v dual rail has not reached the level of the 5v sb rail by time t3, then the rail will experience a sudden step as th e p-mosfet gate is fully enhanced. the soft start profile of the 5vdual may be altered by placing a capacitor between the gate and drain of the p-mosfet. adding this capacitor will increase the gate capacitance and slow down the start of the 5v dual rail. at time t4, the system has transitioned into s0 state and the atx supplies have begun to ramp up. with the isl6506/b (figure 3), the 5v dual rail will begin to ramp up from the 5v atx rail through the body diode of the n-mosfet (q 3 ). the isl6506a will already have the 5v dual rail in regulation (figure 4). at time t5, the 12v atx rail has surpassed the 12v por level. time t6 is three soft start cycles after the 12v por level has been surpassed. at time t6, three events occur simultaneously. the dla pin is forced to a high impedance state which allows the 12v rail to enhance the two n-mosfets (q 1 and q 3 ) that connect the atx rails to the 3.3v dual and 5v dual rails. the 5vdlsb pin is forced to a high impedance state which will turn the p-mosfet (q 2 ) off. finally, the internal ldo which regulates the 3.3v aux rail in sleep states in put in standby mode. sleep to wake state transitions figures 3 and 4, starting at ti me t4, depict the transitions from sleep states to the s0 wake state. figure 3 shows the transition of the isl6506/b from the s4/s5 state to the s0 state. figure 4 shows how the isl6506/b will transition from the s3 sleep state into s0 state. figure 3 also shows how the isl6506a transitions from either s3 or s4/s5 in the s0 state. for all transitions, t4 dep icts the system transition into the s0 state. here, the atx supplies are enabled and begin to ramp up. at time t5, the 12v atx rail has exceeded the por threshold for the isl6506/b and isl6506a. three soft start periods after time t5, at time t6, three events occur figure 2. 5v dual and 3.3v aux timing diagram; isl6506a 5vsb 3.3v, 5v, 12v s3 s5 5vdlsb dla 3v3dl 5vdl 0v time 5vsb (1v/div) figure 3. isl6506 and isl6506b soft-start interval in s4/s5 state and s5 to s0 transition 12vatx (2v/div) 5vatx (1v/div) 5vdual (1v/div) 3.3vdual (2v/div) t1 t2 t3 t0 t5 t4 t6 dla (10v/div) 3.3vatx (1v/div) figure 4. soft start interval for isl6506a in s4/s5 and s5 to s0 transition for isl6506a and s3 to s0 transition for isl6506/a/b 0v time t1 t2 t3 t0 t5 t4 t6 5vdlsb (5v/div) 5vsb (1v/div) 5vdual (1v/div) 3.3vdual (2v/div) dla (10v/div) 12vatx (2v/div) 5vatx (1v/div) 3.3vatx (1v/div) isl6506, isl6506a, isl6506b
6 simultaneously. the dla pin is forced to a high impedance state which allows the 12v rail to enhance the two n- mosfets (q 1 and q 3 ) that connect the atx rails to the 3.3v dual and 5v dual rails. the 5vdlsb pin is forced to a high impedance state which will turn the p-mosfet (q 2 ) off. finally, the internal ldo which regulates the 3.3v dual rail in sleep states is put in standby mode. internal linear regulator undervoltage protection the undervoltage protection on the internal linear regulator is only active during sleep states and after the initial soft start ramp of the 3.3v linear regulator. the undervoltage trip point is set at 25% below nominal, or 2.475v. when an undervoltage is detect ed, the 3.3v linear regulator is disabled. one soft start interval later, the 3.3v linear regulator is retried with a so ft start ramp. if the linear regulator is retried 3 times and a fourth undervoltage is detected, then the 3.3v linear regulator is disabled and can only be reset through a por reset. internal linear regulator over current protection when an overcurrent condition is detected, the gate voltage to the internal nmos pass elem ent is reduced which causes the output voltage of the linear regulator to be reduced. when the output voltage is reduced to the undervoltage trip point, the undervoltage protection is initiated and the output will shutdown. layout considerations the typical application employing an isl6506 is a fairly straight forward implementati on. like with any other linear regulator, attention has to be paid to the few potentially sensitive small signal component s, such as those connected to sensitive nodes or those su pplying critical bypass current. the power components (pass transistors) and the controller ic should be placed first. the controller should be placed in a central position on the mother board, not excessively far from the 3.3v dual island or the i/o circuitry. ensure the 3v3aux connection is properly sized to carry 1a without exhibiting significant resistive losses at the load end. similarly, the input bias supply (5v sb ) carries a similar level of current - for best results, ensure it is connected to its respective source through an adequately sized trace and is properly decoupled. the pass transistors should be placed on pads capable of heatsinking matching the device?s power dissipation. where applicable, multiple via connections to a large internal plane can significantly lower localized device temperature rise. placement of the decoupling and bulk capacitors should reflect their purpose. as such, the high-frequency decoupling capacitors should be placed as close as possible to the load they are decoupli ng; the ones decoupling the controller close to the controller pins, the ones decoupling the load close to the load connector or the load itself (if embedded). even though bulk capacitance (aluminum electrolytics or tantalum capacitors) placement is not as critical as the high-frequency capacitor placement, having these capacitors close to the load they serve is preferable. locate all small signal components close to the respective pins of the control ic, and connect them to ground, if applicable, through a via placed close to the ground pad. a multi-layer printed circuit board is recommended. figure 5 shows the connections to most of the components in the circuit. note that the individual capacitors shown each could represent numerous physical capacitors. dedicate one solid layer for a ground plane and make all critical component ground connections through vias placed as close to the component terminal as possible. the epad should be tied to the ground plane with three to five vias for good thermal management. dedicate another solid layer as a power plane and break this plane into smaller islands of common voltage levels. ideally, the power plane should support both the input power and output power nodes. use copper filled polygons on the top and bottom circuit layers to create power islands connecti ng the filtering components (output capacitors) and the loads. use the remaining printed circuit layers for small signal wiring. figure 5. printed circuit board islands q2 q3 12vatx cin via connection to ground plane island on power plane layer island on circuit/power plane layer isl6506/a/b gnd 5vdlsb key vcc 5vsb dla q4 c 5v load c 5vsb load c hf3v c hf5v 5vatx +3.3vin 3v3aux c 3v 5vdual 3v3dual epad isl6506, isl6506a, isl6506b
7 component selection guidelines output capacitors selection the output capacitors should be selected to allow the output voltage to meet the dynamic regulation requirements of active state operation (s0/s1 ). the load transient for the various microprocessor system?s components may require high quality capacitors to supply the high slew rate (di/dt) current demands. thus, it is recommended that the output capacitors be selected for transient load regulation, paying attention to their parasitic components (esr, esl). also, during the transition between active and sleep states on the 5v dual output, there is a short interval of time during which none of the power pass elements are conducting. during this time the output capa citors have to supply all the output current. the output voltage drop during this brief period of time can be easily approximated with the following formula: , where ? v out = output voltage drop esr out = output capacitor bank esr i out = output current during transition c out = output capacitor bank capacitance t t = active-to-sleep/sleep-to-ac tive transition time (10 s typ.) the output voltage drop is heavily dependent on the esr (equivalent series resistance) of the output capacitor bank, the choice of capacitors should be such as to maintain the output voltage above the lowest allowable regulation level. input capacitors selection the input capacitors for an isl6506/a application must have a sufficiently low esr so as not to allow the input voltage to dip excessively when energy is transferred to the output capacitors. if the atx supply does not meet the specifications, certain imbalances between the atx?s outputs and the isl6506/a?s regul ation levels could have as a result a brisk transfer of energy from the input capacitors to the supplied outputs. at the transition between active and sleep states, such phenomena could be responsible for the 5v sb voltage drooping excessively and affecting the output regulation. the solution to such a potential problem is using larger input capacitors with a lower total combined esr. transistor selection/considerations the isl6506/a usually requires one p-channel and two n- channel mosfets. all three of these mosfets are utilized as on/off switching elements. one important criteria for selection of transistors for all the switching elements is package selection for efficient removal of heat. the power dissipated in a switch element while on is select a package and heatsink that maintains the junction temperature below the rating with the maximum expected ambient temperature. q1, q3 these n-channel mosfets are used to switch the 3.3v and 5v inputs provided by the atx supply into the 3.3v aux and 5v dual outputs while in active (s0, s1) state. the main criteria for the selection of thes e transistors is output voltage budgeting. the maximum r ds(on) allowed at highest junction temperature can be expressed with the following equation: , where v inmin = minimum input voltage v outmin = minimum output voltage allowed i outmax = maximum output current q2 this is a p-channel mosfet used to switch the 5v sb output of the atx supply into the 5v dual output during sleep states. the selection criteria of this device, as with the n-channel mosfets, is proper voltage budgeting. the maximum r ds(on) , however, has to be achieved with only 4.5v of gate-to-source voltage, so a true logic level mosfet needs to be selected. v out ? i out esr out t t c out --------------- - + ?? ?? ?? = p loss i o 2 r ds on () = r ds on () max v inmin v outmin ? i outmax -------------------------------------------------- - = isl6506, isl6506a, isl6506b
8 all intersil u.s. products are manufactured, asse mbled and tested utilizing iso9000 quality systems. intersil corporation?s quality certifications ca n be viewed at www.intersil.com/design/quality intersil products are sold by description only. intersil corpor ation reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of paten ts or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see www.intersil.com isl6506, isl6506a, isl6506b small outline exposed pad plastic packages (epsoic) index area e d n 123 -b- 0.25(0.010) c a m bs e -a- l b m -c- a1 a seating plane 0.10(0.004) h x 45 o c h 0.25(0.010) b m m p1 123 p bottom view n top view side view m8.15c 8 lead narrow body small outline exposed pad plastic package symbol inches millimeters notes min max min max a 0.056 0.066 1.43 1.68 - a1 0.001 0.005 0.03 0.13 - b 0.0138 0.0192 0.35 0.49 9 c 0.0075 0.0098 0.19 0.25 - d 0.189 0.196 4.80 4.98 3 e 0.150 0.157 3.811 3.99 4 e 0.050 bsc 1.27 bsc - h 0.230 0.244 5.84 6.20 - h 0.010 0.016 0.25 0.41 5 l 0.016 0.035 0.41 0.89 6 n8 87 0 o 8 o 0 o 8 o - p - 0.126 - 3.200 11 p1 - 0.099 - 2.514 11 rev. 0 11/03 notes: 1. symbols are defined in the ?mo series symbol list? in section 2.2 of publication number 95. 2. dimensioning and tolerancing per ansi y14.5m - 1982. 3. dimension ?d? does not include mo ld flash, protrusions or gate burrs. mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. dimension ?e? does not include interlead flash or protrusions. interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 5. the chamfer on the body is optional . if it is not present, a visual index feature must be located within the crosshatched area. 6. ?l? is the length of terminal for soldering to a substrate. 7. ?n? is the number of terminal positions. 8. terminal numbers are s hown for reference only. 9. the lead width ?b?, as measur ed 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch). 10. controlling dimension: millimeter. converted inch dimensions are not necessarily exact. 11. dimensions ?p? and ?p1? are t hermal and/or electrical enhanced variations. values shown are maximum size of exposed pad within lead count and body size.
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